AP90T03GS Advanced Power Electronics Corp., AP90T03GS Datasheet - Page 3

• Manufacturer Part Number: AP90T03GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP90T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4
• Rds(on) / Max(m?) Vgs@4.5v: 6
• Qg (nc): 60
• Qgs (nc): 8.5
• Qgd (nc): 38
• Id(a): 75
• Pd(w): 96
• Configuration: Single N
• Package: TO-263

200
160
120
6.0
5.0
4.0
3.0
20
15
10
80
40
0
5
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
0.1
C
=25
V
V
V
0.2
Reverse Diode
o
SD
DS
GS
4
, Source-to-Drain Voltage (V)
T
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.3
j
=150
1
0.4
o
0.5
6
I
T
D
0.6
C
=20A
=25
2
0.7
o
8
T
0.8
V
j
=25
G
7.0V
5.0V
4.5V
10V
=3.0V
0.9
o
10
3
1
160
140
120
100
80
60
40
20
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
1.5
0.5
0
2
1
0
-50
Fig 4. Normalized On-Resistance
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
I
C
D
= 1 50
= 45
A
v.s. Junction Temperature
V
T
DS
1
Junction Temperature
o
j
T
, Junction Temperature (
0
, Drain-to-Source Voltage (V)
0
j
, Junction Temperature (
2
50
50
3
AP90T03GS
o
100
100
C)
o
V
C)
4
G
7.0V
5.0V
4.5V
10V
=3.0V
150
150
5
3