AP90T03GS Advanced Power Electronics Corp., AP90T03GS Datasheet - Page 4

• Manufacturer Part Number: AP90T03GS
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP90T03GS

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4
• Rds(on) / Max(m?) Vgs@4.5v: 6
• Qg (nc): 60
• Qgs (nc): 8.5
• Qgd (nc): 38
• Id(a): 75
• Pd(w): 96
• Configuration: Single N
• Package: TO-263

AP90T03GS
1000
100
14
12
10
10
8
6
4
2
0
1
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
T
Single
10%
90%
V
I
c
V
D
=25
GS
DS
= 40
20
o
V
C
DS
Q
t
V
V
V
G
,Drain-to-Source Voltage (V)
d(on)
DS
DS
DS
, Total Gate Charge (nC)
40
1
=15V
=20V
=24V
t
r
60
80
10
t
d(off)
t
100
DC
f
100us
1ms
10ms
100ms
120
100
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.02
Duty factor=0.5
V
0.01
0.2
0.05
0.1
G
5
0.0001
V
Single Pulse
DS
Q
,Drain-to-Source Voltage (V)
GS
t , Pulse Width (s)
9
0.001
Q
Q
13
Charge
G
GD
0.01
17
P
DM
Duty factor = t/T
Peak T
0.1
21
j
= P
t
DM
f=1.0MHz
T
x R
thjc
1
25
C
C
C
+ T
Q
iss
oss
rss
C
10
29
4