AP92T03GH Advanced Power Electronics Corp., AP92T03GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GH

Manufacturer Part Number
AP92T03GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T03GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
5.2
Qg (nc)
45
Qgs (nc)
6
Qgd (nc)
26
Id(a)
75
Pd(w)
89
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP92T03GJ) are
available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Halogen-Free Product
4
-55 to 150
-55 to 150
AP92T03GH/J-HF
Rating
BV
R
I
D
0.71
+20
300
30
75
50
89
G
DS(ON)
D
DSS
Value
S
62.5
110
1.4
G D
S
TO-252(H)
TO-251(J)
201106093
4mΩ
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

Related parts for AP92T03GH

AP92T03GH Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 1 Parameter AP92T03GH/J-HF Halogen-Free Product BV 30V DSS R 4mΩ DS(ON) I 75A TO-252( ...

Page 2

... AP92T03GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 I =40A D V =10V ℃ G 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 0 Fig 6. On-Resistance vs. Drain Current AP92T03GH/J- =150 C C 10V 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( ...

Page 4

... AP92T03GH/J- =40A =12V DS V =16V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 280 V =5V DS 240 ...

Related keywords