AP92T03GH Advanced Power Electronics Corp., AP92T03GH Datasheet - Page 4

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GH

Manufacturer Part Number
AP92T03GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92T03GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
5.2
Qg (nc)
45
Qgs (nc)
6
Qgd (nc)
26
Id(a)
75
Pd(w)
89
Configuration
Single N
Package
TO-252
AP92T03GH/J-HF
1000
100
280
240
200
160
120
10
80
40
12
0
9
6
3
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
Single Pulse
T
DS
C
=5V
=25
20
1
o
V
C
V
Q
V
I
DS
GS
V
G
D
DS
V
DS
=40A
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
=12V
DS
40
2
1
=16V
=20V
T
j
=25
60
3
o
C
80
10
4
T
j
=150
100
5
100us
1ms
10ms
100ms
1s
DC
o
C
120
100
6
Fig10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Duty factor = 0.5
V
0.2
0.05
0.1
0.02
Single Pulse
0.01
G
5
0.0001
Q
V
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.001
Q
Q
13
Charge
G
GD
17
0.01
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
C
C
+ T
Q
iss
oss
rss
C
29
1
4

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