Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GS

Manufacturer Part NumberAP92T03GS
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP92T03GS datasheet
 


Specifications of AP92T03GS

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v4Rds(on) / Max(m?) Vgs@4.5v5.2
Qg (nc)45Qgs (nc)6
Qgd (nc)26Id(a)80
Pd(w)89ConfigurationSingle N
PackageTO-263  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
C
I
@T
=100℃
Continuous Drain Current
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
3
1
Parameter
AP92T03GS/P
RoHS-compliant Product
BV
30V
DSS
R
4mΩ
DS(ON)
I
80A
D
G
D
TO-263(S)
S
G
TO-220(P)
D
S
Rating
Units
30
+20
80
50
320
89
W
0.71
W/℃
-55 to 150
-55 to 150
Value
Units
1.4
℃/W
4
℃/W
40
62
℃/W
200901123
V
V
A
A
A
1

AP92T03GS Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 1 Parameter AP92T03GS/P RoHS-compliant Product BV 30V DSS R 4mΩ DS(ON) I 80A TO-263(S) S ...

  • Page 2

    ... AP92T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... V Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 5 4.0 3.0 2.0 1.2 1.4 0 Fig 6. On-Resistance vs. Drain Current AP92T03GS 150 C C 10V 7.0V 5. Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( =4.5V GS ...

  • Page 4

    ... AP92T03GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 280 ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 92T03GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence Millimeters SYMBOLS MIN ...

  • Page 6

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 92T03GS YWWSSS θ θ L1 Part Number meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y: ...