AP92T03GS Advanced Power Electronics Corp., AP92T03GS Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92T03GS

Manufacturer Part Number
AP92T03GS
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP92T03GP.pdf (6 pages)

Specifications of AP92T03GS

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
5.2
Qg (nc)
45
Qgs (nc)
6
Qgd (nc)
26
Id(a)
80
Pd(w)
89
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GP)
are available for low-profile applications.
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
G
4
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
0.71
+20
320
S
30
80
50
89
DS(ON)
G
DSS
Value
AP92T03GS/P
D
1.4
62
40
S
TO-263(S)
TO-220(P)
200901123
4mΩ
℃/W
Units
W/℃
Units
℃/W
℃/W
30V
80A
W
℃
℃
V
V
A
A
A
1

Related parts for AP92T03GS

Image
Part Number
Description
Manufacturer
Datasheet
Request R
AP4800TH
Part Number:
AP4800TH
Description:
Manufacturer:
Advanced Power Electronics Corp.
4503AGM
Part Number:
4503AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4835GM
Part Number:
4835GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
4957AGM
Part Number:
4957AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9468GM
Part Number:
9468GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9474GM
Part Number:
9474GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9467GM
Part Number:
9467GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9962AGM
Part Number:
9962AGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9985GM
Part Number:
9985GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412GM
Part Number:
9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP9412GM
Part Number:
AP9412GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9412BGM
Part Number:
9412BGM
Description:
Manufacturer:
Advanced Power Electronics Corp.
9685GM
Part Number:
9685GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
AP6679GM
Part Number:
AP6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.
6679GM
Part Number:
6679GM
Description:
Manufacturer:
Advanced Power Electronics Corp.

AP92T03GS Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 1 Parameter AP92T03GS/P RoHS-compliant Product BV 30V DSS R 4mΩ DS(ON) I 80A TO-263(S) S ...

Page 2

... AP92T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.4 I =40A D V =10V G 2.0 1.6 1.2 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 6.0 5 4.0 3.0 2.0 1.2 1.4 0 Fig 6. On-Resistance vs. Drain Current AP92T03GS 150 C C 10V 7.0V 5. Drain-to-Source Voltage ( 100 125 150 Junction Temperature ( =4.5V GS ...

Page 4

... AP92T03GS Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 280 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 92T03GP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Millimeters SYMBOLS MIN ...

Page 6

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 Part Marking Information & Packing : TO-263 92T03GS YWWSSS θ θ L1 Part Number meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y： ...

Related keywords