AP9412AGI Advanced Power Electronics Corp., AP9412AGI Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP9412AGI

Manufacturer Part Number
AP9412AGI
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP9412AGI

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
8
Qg (nc)
21
Qgs (nc)
3.6
Qgd (nc)
12
Id(a)
68
Pd(w)
34.7
Configuration
Single N
Package
TO-220CFM
▼ Fast Switching Performance
▼ Single Drive Requirement
▼ Full Isolation Package
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
34.7
±20
250
30
68
43
DS(ON)
D
DSS
S
Value
3.6
65
AP9412AGI
TO-220CFM(I)
200805081
6mΩ
Units
Units
℃/W
℃/W
30V
68A
W
V
V
A
A
A
1

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AP9412AGI Summary of contents

Page 1

... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP9412AGI RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 68A TO-220CFM(I) S Rating Units 30 ± ...

Page 2

... AP9412AGI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.31 0.4 10 -50 Fig 4. Normalized On-Resistance 1 0.8 0.4 0 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP9412AGI 10V o T =150 C 7.0V C 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature ...

Page 4

... AP9412AGI =15V DS V =18V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0.1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO LOGO 9412AGI YWWSSS A A SYMBOLS φ e 1.All Dimensions Are in Millimeters 2.Dimension Does Not Include Mold Protrusions. ...

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