AP9T18GEH Advanced Power Electronics Corp., AP9T18GEH Datasheet
AP9T18GEH
Specifications of AP9T18GEH
Related parts for AP9T18GEH
AP9T18GEH Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 4. 4. Parameter AP9T18GEH/J Pb Free Plating Product BV 20V D DSS R 14mΩ DS(ON) I 40A TO-252( TO-251(J) ...
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... AP9T18GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.6 I =20A D V =4. 1.4 1.2 1.0 0.8 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 20.0 10.0 0 Fig 6. On-Resistance vs. Drain Current AP9T18GEH 150 C C 4.5V 3.5V 2.5V V =1. Drain-to-Source Voltage ( 100 125 150 o , Junction Temperature ( =2. =4. ...
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... AP9T18GEH =20A =10V DS V =12V =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...