AP0803GMT-A-HF Advanced Power Electronics Corp., AP0803GMT-A-HF Datasheet

AP0803GMT-A-HF

Manufacturer Part Number
AP0803GMT-A-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP0803GMT-A-HF

Vds
30
Vgs
20
Rds(on) / Max(m?) Vgs@10v
8.5
Rds(on) / Max(m?) Vgs@4.5v
15
Qg (nc)
5
Qgs (nc)
1.5
Qgd (nc)
3
Id(a)
50
Pd(w)
29.7
Configuration
Single N
Package
PMPAK 5X6
▼ Simple Drive Requirement
▼ SO-8 Compatible
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
and the foot print is compatible with SO-8 with backside heat sink.
D
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
@T
C
A
A
Symbol
Symbol
C
A
=25℃
=70℃
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
®
5x6 package is special for DC-DC converters application
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
AP0803GMT-A-HF
-55 to 150
-55 to 150
S
Rating
BV
R
I
D
S
29.7
16.2
+20
160
30
50
19
15
DS(ON)
S
5
DSS
G
Value
4.2
25
PMPAK
D
D
8.5mΩ
®
201010221
D
5x6
Units
Units
℃/W
℃/W
30V
50A
mJ
W
W
D
V
V
A
A
A
A
1

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AP0803GMT-A-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP0803GMT-A-HF Halogen-Free Product BV 30V DSS R 8.5mΩ DS(ON) I 50A □ ® ...

Page 2

... AP0803GMT-A-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =30A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 o =25 C 1.2 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP0803GMT-A-HF 10V o T =150 C C 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP0803GMT-A- =30A =15V DS V =18V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 0 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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