AP83T03GJ-HF Advanced Power Electronics Corp., AP83T03GJ-HF Datasheet

AP83T03GJ-HF

Manufacturer Part Number
AP83T03GJ-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP83T03GJ-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
11
Qg (nc)
21
Qgs (nc)
3.5
Qgd (nc)
15
Id(a)
75
Pd(w)
60
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP83T03GJ) is
available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 175
-55 to 175
AP83T03GH/J-HF
Rating
BV
R
I
D
G
+20
240
30
75
53
60
DS(ON)
D
DSS
G
S
Value
62.5
110
D
2.5
S
TO-251(J)
TO-252(H)
201003052
6mΩ
Units
Units
℃/W
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

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AP83T03GJ-HF Summary of contents

Page 1

... The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP83T03GJ) is available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP83T03GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source ...

Page 3

T = 160 120 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 9 I =30A = ...

Page 4

AP83T03GH/J- =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this area limited ...

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