AP50T03GH Advanced Power Electronics Corp., AP50T03GH Datasheet
AP50T03GH
Specifications of AP50T03GH
Related parts for AP50T03GH
AP50T03GH Summary of contents
Page 1
... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP50T03GH/J BV 30V DSS R 16mΩ DS(ON) I 37A TO-252( ...
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... AP50T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ∆BV /∆T Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... V Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.7 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP50T03GH/J 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...
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... AP50T03GH =15V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...