AP85U03GP-HF Advanced Power Electronics Corp., AP85U03GP-HF Datasheet

AP85U03GP-HF

Manufacturer Part Number
AP85U03GP-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP85U03GP-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
5
Rds(on) / Max(m?) Vgs@4.5v
9
Qg (nc)
37
Qgs (nc)
7.5
Qgd (nc)
23
Id(a)
80
Pd(w)
60
Configuration
Single N
Package
TO-220
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is widly preferred for commercial-industrial power
applications and suited for low voltage applications such as DC/DC
converters.
V
V
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
C
C
Symbol
Symbol
C
C
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
, V
GS
GS
@ 10V
4
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
-55 to 175
-55 to 175
D
Rating
BV
R
I
S
D
2.42
28.8
+20
220
30
80
60
60
AP85U03GP-HF
DS(ON)
DSS
Value
2.5
62
TO-220(P)
201106091
5mΩ
Units
Units
℃/W
℃/W
30V
80A
W
W
mJ
V
V
A
A
A
1

Related parts for AP85U03GP-HF

AP85U03GP-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 10V GS @ 10V Parameter AP85U03GP-HF Halogen-Free Product BV 30V DSS R 5mΩ DS(ON) I 80A D □ G TO-220( Rating Units 30 ...

Page 2

... AP85U03GP-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I =1mA D 1.6 C 1.2 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP85U03GP-HF 10V o T =175 C C 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

... AP85U03GP- =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords