AP4503BGO-HF Advanced Power Electronics Corp., AP4503BGO-HF Datasheet

AP4503BGO-HF

Manufacturer Part Number
AP4503BGO-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4503BGO-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
23
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
7
Qgs (nc)
2
Qgd (nc)
4
Id(a)
6.3
Pd(w)
1.38
Configuration
Complementary N-P
Package
TSSOP-8
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
D2
TSSOP-8
S2
S2
G2
D1
S1
S1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G1
N-channel
3
N-CH BV
P-CH BV
+20
6.3
5.0
G1
30
20
Halogen-Free Product
-55 to 150
-55 to 150
Rating
1.38
R
I
R
I
D
D
D1
P-channel
AP4503BGO-HF
DS(ON)
DS(ON)
DSS
DSS
Value
S1
+20
-5.2
-4.2
-30
-20
90
G2
23mΩ
35mΩ
201104201
-5.2A
-30V
6.3A
Units
℃/W
30V
Unit
W
D2
V
V
A
A
A
S2
1

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AP4503BGO-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- TSSOP-8 D1 P-CH BV N-channel +20 3 6.3 3 5.0 1 Parameter 3 AP4503BGO-HF Halogen-Free Product 30V DSS R 23mΩ DS(ON) I 6.3A D -30V DSS R 35mΩ DS(ON) I -5. ...

Page 2

... AP4503BGO-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... =-15V DS V =-4. =-15V =3.3Ω =-10V =-15V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.2A =-5A dI/dt=100A/µs AP4503BGO-HF Min. Typ. Max. Units - +100 - 960 ...

Page 4

... AP4503BGO-HF N-Channel 30 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0.8 V ...

Page 5

... Single Pulse 0.01 100ms 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance =150 C 4. Fig 12. Gate Charge Waveform AP4503BGO-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

Page 6

... AP4503BGO-HF P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Single Pulse 100ms 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance =150 C -4. Fig 12. Gate Charge Waveform AP4503BGO-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

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