AP0403GH-HF Advanced Power Electronics Corp., AP0403GH-HF Datasheet

AP0403GH-HF

Manufacturer Part Number
AP0403GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP0403GH-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Rds(on) / Max(m?) Vgs@4.5v
6.5
Qg (nc)
16.5
Qgs (nc)
3
Qgd (nc)
9.6
Id(a)
75
Pd(w)
44.6
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
44.6
±20
300
30
75
50
DS(ON)
DSS
G
AP0403GH-HF
Value
62.5
2.8
110
D
S
TO-252(H)
4.5mΩ
201109302
Units
Units
℃/W
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

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AP0403GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 4 1 Parameter AP0403GH-HF Halogen-Free Product BV 30V DSS R 4.5mΩ DS(ON) I 75A □ S ...

Page 2

... AP0403GH-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0403GH- =150 C 10V C 7 .0V 6.0V 5 =4.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP0403GH- =30A D V =15V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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