AP60T03GH-HF Advanced Power Electronics Corp., AP60T03GH-HF Datasheet

AP60T03GH-HF

Manufacturer Part Number
AP60T03GH-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP60T03GH-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
25
Qg (nc)
12
Qgs (nc)
4
Qgd (nc)
7
Id(a)
45
Pd(w)
44
Configuration
Single N
Package
TO-252
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP60T03GJ) are
available for low-profile applications.
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
@ 10V
@ 10V
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 175
-55 to 175
Rating
BV
R
I
D
+20
120
0.3
2.4
30
45
32
44
DS(ON)
G
DSS
D
Value
AP60T03GH/J
62.5
110
S
3.4
G D
S
TO-252(H)
TO-251(J)
12mΩ
201112077
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
45A
W
W
V
V
A
A
A
1

Related parts for AP60T03GH-HF

AP60T03GH-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V Parameter AP60T03GH/J RoHS-compliant Product BV 30V DSS R 12mΩ DS(ON) I 45A TO-252( TO-251(J) ...

Page 2

... AP60T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ∆BV /∆T DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 I =20A D V =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 2.3 1.8 C 1.3 0.8 0.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP60T03GH/J o 10V C 8.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 175 Junction Temperature ( 100 175 Junction Temperature ( ...

Page 4

... AP60T03GH =20A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Related keywords