AP60N03GP Advanced Power Electronics Corp., AP60N03GP Datasheet

AP60N03GP

Manufacturer Part Number
AP60N03GP
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP60N03GP

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
13.5
Rds(on) / Max(m?) Vgs@4.5v
20
Qg (nc)
22.4
Qgs (nc)
2.7
Qgd (nc)
14
Id(a)
55
Pd(w)
62.5
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP60N03GP
Manufacturer:
SINOPOWER/大中
Quantity:
20 000
▼ ▼ ▼ ▼ Low On-Resistance
▼ ▼ ▼ ▼ Fast Switching
▼ ▼ ▼ ▼ Simple Drive Requirement
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03GP) is available for low-profile applications.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
62.5
±20
215
0.5
30
55
35
DS(ON)
G D
DSS
AP60N03GS/P
Value
2.0
62
S
TO-263(S)
TO-220(P)
13.5mΩ
Units
W/℃
Units
℃/W
℃/W
30V
55A
201221041
W
V
V
A
A
A

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AP60N03GP Summary of contents

Page 1

... The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GP) is available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP60N03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = 150 100 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ...

Page 4

AP60N03GS =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics ...

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