AP6679BGI-HF Advanced Power Electronics Corp., AP6679BGI-HF Datasheet
AP6679BGI-HF
Specifications of AP6679BGI-HF
Related parts for AP6679BGI-HF
AP6679BGI-HF Summary of contents
Page 1
... Symbol Rthj-c Maximum Thermal Resistance Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679BGI-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -48A TO-220CFM(I) S Rating Units -30 ...
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... AP6679BGI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2 -30A D 1 -10V G 1.6 1.4 1.2 1.0 0.8 0.6 0 -50 Fig 4. Normalized On-Resistance 2 1.6 1 0.8 0.4 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP6679BGI-HF -10V 150 C C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...
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... AP6679BGI- =-24V DS I =-30A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this 100 area limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...