AP6679BGI-HF

Manufacturer Part NumberAP6679BGI-HF
ManufacturerAdvanced Power Electronics Corp.
AP6679BGI-HF datasheet
 


Specifications of AP6679BGI-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)6.5
Qgd (nc)28.5Id(a)-48
Pd(w)31.3Configurationsingle P
PackageTO-220  
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Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP6679BGI-HF
Halogen-Free Product
BV
-30V
DSS
R
9mΩ
DS(ON)
I
-48A
D
G
D
TO-220CFM(I)
S
Rating
Units
-30
V
+20
V
-48
A
-30
A
-200
A
31.3
W
1.92
W
-55 to 150
-55 to 150
Value
Units
4
℃/W
65
℃/W
201203091
1

AP6679BGI-HF Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679BGI-HF Halogen-Free Product BV -30V DSS R 9mΩ DS(ON) I -48A TO-220CFM(I) S Rating Units -30 ...

  • Page 2

    ... AP6679BGI-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 -30A D 1 -10V G 1.6 1.4 1.2 1.0 0.8 0.6 0 -50 Fig 4. Normalized On-Resistance 2 1.6 1 0.8 0.4 0 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP6679BGI-HF -10V 150 C C -7.0V -6.0V -5. 4 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

  • Page 4

    ... AP6679BGI- =-24V DS I =-30A Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this 100 area limited by R DS(ON = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...