AP3402GEH Advanced Power Electronics Corp., AP3402GEH Datasheet
AP3402GEH
Specifications of AP3402GEH
Related parts for AP3402GEH
AP3402GEH Summary of contents
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... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter Max. Max. AP3402GEH/J Pb Free Plating Product BV 35V DSS R 18mΩ DS(ON) I 38A TO-252( TO-251(J) S Rating ...
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... AP3402GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 = 1.2 0.9 0.6 10 -50 Fig 4. Normalized On-Resistance 1.5 1 0.9 0.6 0.3 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP3402GEH/J 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage (V) DS =25A =10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...
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... AP3402GEH =25A =15V =20V DS V =25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 50 V =5V DS ...