AP3402GEH Advanced Power Electronics Corp., AP3402GEH Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP3402GEH

Manufacturer Part Number
AP3402GEH
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP3402GEH

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
32
Qg (nc)
10.5
Qgs (nc)
4
Qgd (nc)
6
Id(a)
38
Pd(w)
34.7
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
G
Rating
BV
R
I
D
D
34.7
0.27
±20
110
35
38
24
DS(ON)
S
G D
DSS
Value
AP3402GEH/J
110
3.6
S
TO-252(H)
TO-251(J)
200420052-1/4
18mΩ
Units
W/℃
Units
℃/W
℃/W
35V
38A
W
V
V
A
A
A

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AP3402GEH Summary of contents

Page 1

... Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter Max. Max. AP3402GEH/J Pb Free Plating Product BV 35V DSS R 18mΩ DS(ON) I 38A TO-252( TO-251(J) S Rating ...

Page 2

... AP3402GEH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 = 1.2 0.9 0.6 10 -50 Fig 4. Normalized On-Resistance 1.5 1 0.9 0.6 0.3 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP3402GEH/J 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage (V) DS =25A =10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 o ...

Page 4

... AP3402GEH =25A =15V =20V DS V =25V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 50 V =5V DS ...

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