AP4416GH Advanced Power Electronics Corp., AP4416GH Datasheet

The TO-252 package is universally preferred for all commercial-industrial  surface mount applications and suited for low voltage applications such as DC/DC converters

AP4416GH

Manufacturer Part Number
AP4416GH
Description
The TO-252 package is universally preferred for all commercial-industrial  surface mount applications and suited for low voltage applications such as DC/DC converters
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4416GH

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
45
Rds(on) / Max(m?) Vgs@4.5v
65
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3.5
Id(a)
20
Pd(w)
26
Configuration
Single N
Package
TO-252
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4416GJ) is available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.21
±20
35
20
12
50
26
DS(ON)
G
DSS
D
Value
S
4.8
110
G D
AP4416GH/J
S
TO-251(J)
TO-252(H)
200418051-1/4
45mΩ
Units
W/℃
Units
℃/W
℃/W
35V
20A
W
V
V
A
A
A

Related parts for AP4416GH

AP4416GH Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter Max. Max. AP4416GH/J Pb Free Plating Product BV 35V DSS R 45mΩ DS(ON) I 20A TO-252( ...

Page 2

... AP4416GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 1.4 1.0 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1 0.6 0.2 -50 1.6 Fig 6. Gate Threshold Voltage v.s. AP4416GH/J 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage (V) DS =10V 0 50 100 Junction Temperature ( 100 o T ...

Page 4

... AP4416GH =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100.0 10 Single Pulse 0.1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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