AP4511GD Advanced Power Electronics Corp., AP4511GD Datasheet - Page 7

• Manufacturer Part Number: AP4511GD
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
0.01
100
0.1
16
12
10
30
20
10
8
4
0
0
1
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
Single Pulse
V
I
T
DS
DS
D
-V
c
= -6 A
= - 28V
=-5V
=25
-V
5
DS
Q
GS
o
G
, Drain-to-Source Voltage (V)
C
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
1
2
10
T
j
=25
o
C
15
10
4
T
j
20
=150
100ms
100us
10ms
o
1ms
DC
C
1s
100
25
6
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.05
G
0.02
0.2
5
0.1
0.01
0.001
Single Pulse
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
G
GD
Charge
0.1
17
1
P
DM
AP4511GD
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
o
t
C/W
DM
f=1.0MHz
T
10
x R
25
thja
+ T
C
C
C
Q
a
rss
iss
oss
100
29
7