Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4511GD

Manufacturer Part NumberAP4511GD
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GD datasheet
 


Specifications of AP4511GD

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v25Rds(on) / Max(m?) Vgs@4.5v37
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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AP4511GD
N-CH Electrical Characteristics@T
Symbol
Parameter
BV
Drain-Source Breakdown Voltage
DSS
ΔBV
Breakdown Voltage Temperature Coefficient
/ΔT
DSS
j
R
Static Drain-Source On-Resistance
DS(ON)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-Source Leakage Current
DSS
Drain-Source Leakage Current (T
I
Gate-Source Leakage
GSS
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Q
Gate-Drain ("Miller") Charge
gd
t
Turn-on Delay Time
d(on)
t
Rise Time
r
t
Turn-off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
R
Gate Resistance
g
Source-Drain Diode
Symbol
Parameter
V
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
o
=25
C(unless otherwise specified)
j
Test Conditions
V
=0V, I
=250uA
GS
D
Reference to 25℃, I
2
V
=10V, I
=7A
GS
D
V
=4.5V, I
GS
D
V
=V
, I
=250uA
DS
GS
D
V
=10V, I
=7A
DS
D
V
=35V, V
DS
GS
o
V
=28V, V
=70
C)
j
DS
GS
V
=±20V
GS
2
I
=7A
D
V
=28V
DS
V
=4.5V
GS
2
V
=18V
DS
I
=1A
D
R
=3.3Ω,V
G
GS
R
=18Ω
D
V
=0V
GS
V
=25V
DS
f=1.0MHz
f=1.0MHz
Test Conditions
2
I
=1.7A, V
S
GS
2
I
=7A, V
=0V
S
GS
dI/dt=100A/µs
Min.
Typ.
35
-
=1mA
-
0.02
D
-
20
=5A
-
30
1
-
-
9
=0V
-
-
=0V
-
-
-
-
-
11
-
3
-
6
-
12
-
7
=10V
-
22
-
6
-
830
-
150
-
110
-
1.2
Min.
Typ.
=0V
-
-
-
18
-
12
Max. Units
-
V
-
V/℃
25
37
3
V
-
S
uA
1
uA
25
±100
nA
nC
18
nC
-
-
nC
ns
-
ns
-
-
ns
ns
-
pF
1330
pF
-
pF
-
Ω
1.8
Max. Units
1.2
V
-
ns
-
nC
2