AP4511GED Advanced Power Electronics Corp., AP4511GED Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GED

Manufacturer Part Number
AP4511GED
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4511GED

Vds
40V
Vgs
±16V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
8.2
Qgs (nc)
1.5
Qgd (nc)
3.6
Id(a)
6
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Thermal Resistance Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Parameter
1
D1
3
3
PDIP-8
D1
D2
D2
S1
G1
3
S2
G2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±16
Pb Free Plating Product
40
6.0
5.0
30
-55 to 150
-55 to 150
G1
Rating
0.016
2.0
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
-5.0
-4.0
±16
-40
-30
D1
S1
AP4511GED
G2
200725064-1/7
28mΩ
42mΩ
-40V
Units
W/℃
℃/W
40V
-5A
Unit
6A
W
V
V
A
A
A
D2
S2

Related parts for AP4511GED

AP4511GED Summary of contents

Page 1

... Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4511GED Pb Free Plating Product N-CH BV 40V DSS R 28mΩ DS(ON P-CH BV -40V DSS R 42mΩ DS(ON ...

Page 2

... AP4511GED N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... =- =-20V DS V =-4. =-20V =3Ω, =4Ω = =-20V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.25A =-5A dI/dt=-100A/µs AP4511GED Min. Typ. -40 - =-1mA - -0. =-250uA -0 ...

Page 4

... AP4511GED N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 105 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o =150 Fig 12. Gate Charge Waveform AP4511GED f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...

Page 6

... AP4511GED P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GED f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse t Duty factor = t/T Peak ...

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