AP4511GED Advanced Power Electronics Corp., AP4511GED Datasheet - Page 5

• Manufacturer Part Number: AP4511GED
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GED

• Vds: 40V
• Vgs: ±16V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.2
• Qgs (nc): 1.5
• Qgd (nc): 3.6
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
12
10
30
20
10
8
4
0
1
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
I
DS
DS
D
=6A
=20V
Single Pulse
=5V
T
A
V
=25
Q
V
5
GS
G
DS
T
o
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
j
C
1
2
=25
o
C
10
T
j
=150
10
4
o
15
C
100ms
100us
10ms
1ms
DC
1s
20
100
6
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.01
0.05
0.1
Duty factor=0.5
0.2
G
Single Pulse
0.001
5
Q
V
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
GD
Charge
0.1
17
AP4511GED
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
o
t
C/W
DM
f=1.0MHz
T
10
x R
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
100
29
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