AP4511GED Advanced Power Electronics Corp., AP4511GED Datasheet - Page 6

• Manufacturer Part Number: AP4511GED
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GED

• Vds: 40V
• Vgs: ±16V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.2
• Qgs (nc): 1.5
• Qgd (nc): 3.6
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
AP4511GED
110
30
20
10
90
70
50
30
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
Reverse Diode
-V
1
-V
-V
SD
4
GS
DS
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
0.4
T
, Drain-to-Source Voltage (V)
j
=150
2
T
A
o
= 25
0.6
6
C
T
I
o
3
A
C
D
=25
= -3 A
0.8
o
C
T
8
V
j
=25
G
4
= - 3.0V
1
-7.0V
-5.0V
-4.5V
o
-10V
C
10
1.2
5
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
30
20
10
0
25
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
G
D
= 150
=-10V
=-5A
T
v.s. Junction Temperature
Junction Temperature
-V
o
1
50
j
C
T
, Junction Temperature (
DS
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
75
50
100
3
o
C)
100
V
o
125
C)
4
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
5
150
150
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