AP4511GED-HF Advanced Power Electronics Corp., AP4511GED-HF Datasheet - Page 4

• Manufacturer Part Number: AP4511GED-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GED-HF

• Vds: 40V
• Vgs: ±16V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.2
• Qgs (nc): 1.5
• Qgd (nc): 3.6
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4511GED-HF
105
75
45
15
30
20
10
8
6
4
2
0
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
0.2
V
Reverse Diode
o
V
DS
V
C
SD
4
GS
T
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
j
, Gate-to-Source Voltage (V)
=150
0.4
1
o
C
0.6
6
T
I
A
D
=25
= 4 A
0.8
2
T
o
j
C
=25
8
V
o
C
1
G
=3.0V
7.0V
5.0V
4.5V
10V
1.2
3
10
2.0
1.6
1.2
0.8
1.6
1.2
0.8
0.4
30
20
10
0
-50
25
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
A
D
G
= 150
= 6 A
=10V
v.s. Junction Temperature
Junction Temperature
V
50
o
T
C
DS
T
1
0
j
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
75
50
2
100
100
3
o
o
125
C)
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
4
4