AP4511GED-HF Advanced Power Electronics Corp., AP4511GED-HF Datasheet - Page 7

• Manufacturer Part Number: AP4511GED-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GED-HF

• Vds: 40V
• Vgs: ±16V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.2
• Qgs (nc): 1.5
• Qgd (nc): 3.6
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
0.01
100
12
0.1
10
30
20
10
8
4
0
1
0
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
Single Pulse
T
V
A
DS
=25
-V
=-5V
-V
4
DS
Q
o
GS
C
G
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Total Gate Charge (nC)
1
2
j
=25
V
8
I
DS
D
o
= - 2 0 V
= -5 A
C
12
T
j
=150
10
4
o
C
16
100ms
100us
10ms
1ms
DC
1s
100
20
6
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.05
0.02
G
5
0.1
0.01
0.2
0.001
Single Pulse
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
G
GD
AP4511GED-HF
Charge
0.1
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
o
t
C/W
f=1.0MHz
DM
T
10
x R
25
thja
+ T
C
C
C
Q
a
iss
oss
rss
100
29
7