AP4511GH Advanced Power Electronics Corp., AP4511GH Datasheet - Page 5

• Manufacturer Part Number: AP4511GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 15
• Pd(w): 10.4
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
100
0.1
10
14
12
10
40
30
20
10
1
8
6
4
2
0
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
V
V
I
Single Pulse
=5V
DS
DS
D
T
V
5
= 8 A
Q
= 28V
C
GS
, Drain-to-Source Voltage (V)
T
=25
G
2
j
, Gate-to-Source Voltage (V)
=25
, Total Gate Charge (nC)
o
1
C
o
C
10
4
15
T
10
j
=150
6
o
20
C
100ms
100us
10ms
1ms
DC
25
100
8
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
Duty factor=0.5
0.02
G
0.05
5
0.2
0.1
0.0001
Single Pulse
V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.001
Q
t , Pulse Width (s)
Q
13
G
GD
Charge
17
0.01
P
AP4511GH
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
+ T
C
C
Q
C
oss
rss
iss
29
1
5