AP4511GH Advanced Power Electronics Corp., AP4511GH Datasheet - Page 6

• Manufacturer Part Number: AP4511GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 15
• Pd(w): 10.4
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
AP4511GH
50
40
30
20
10
90
70
50
30
0
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
C
= 25
0.2
-V
-V
-V
Reverse Diode
o
1
C
DS
SD
T
GS
4
j
, Drain-to-Source Voltage (V)
=150
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
0.4
o
2
C
0.6
6
3
T
I
D
C
0.8
=25
= - 4 A
T
8
o
V
C
j
G
=25
4
= - 3.0V
1
-7.0V
-5.0V
-4.5V
o
-10V
C
1.2
10
5
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
T
= - 10V
= -6 A
C
= 150
-V
v.s. Junction Temperature
Junction Temperature
T
T
1
DS
j
j
0
0
o
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
C
2
50
50
3
100
o
100
o
V
C)
C)
G
4
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
150
5
6