AP4511GH Advanced Power Electronics Corp., AP4511GH Datasheet - Page 7

• Manufacturer Part Number: AP4511GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 15
• Pd(w): 10.4
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
100
0.1
16
12
30
20
10
10
0
8
4
0
1
0
0.1
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
V
Single Pulse
DS
T
=-5V
V
C
I
=25
DS
D
-V
-V
5
= -6 A
= - 28V
Q
T
o
DS
GS
2
C
j
G
=25
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
1
o
C
10
4
15
T
j
=150
10
o
6
C
20
100ms
100us
10ms
1ms
DC
25
100
8
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
0.1
0.00001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
G
Duty factor=0.5
0.01
5
Single Pulse
0.02
-V
0.1
0.2
0.05
0.0001
Q
DS
GS
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
0.001
Q
Q
13
G
GD
Charge
17
0.01
P
AP4511GH
DM
Duty factor = t/T
Peak T
21
j
= P
t
0.1
DM
f=1.0MHz
T
x R
25
thjc
C
C
+ T
Q
C
oss
rss
C
iss
29
1
7