AP4511GH-A Advanced Power Electronics Corp., AP4511GH-A Datasheet - Page 4

• Manufacturer Part Number: AP4511GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 8.6
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
AP4511GH-A
50
40
30
20
10
38
34
30
26
22
18
0
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
0.2
V
GS
Reverse Diode
V
T
1
DS
SD
j
, Gate-to-Source Voltage (V)
=150
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
o
T
C
C
2
= 25
0.6
6
o
C
T
I
C
D
3
=25
= 5 A
0.8
o
C
T
8
j
=25
V
4
G
1
=3.0V
o
7.0V
5.0V
4.5V
C
10V
1.2
5
10
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.1
0.8
0.5
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
C
= 8 A
=10V
= 150
V
v.s. Junction Temperature
Junction Temperature
T
1
T
DS
j
o
0
j
0
, Junction Temperature (
C
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
3
o
100
100
C)
o
C)
4
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
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