AP4511GH-A Advanced Power Electronics Corp., AP4511GH-A Datasheet - Page 5

• Manufacturer Part Number: AP4511GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 8.6
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
0.01
100
0.1
10
1
14
12
10
0.1
50
40
30
20
10
0
8
6
4
2
0
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
V
V
I
DS
DS
=5V
D
Single Pulse
V
5
T
= 8 A
Q
= 28V
GS
, Drain-to-Source Voltage (V)
A
2
G
=25
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
1
T
o
C
j
10
=25
o
C
4
15
10
T
j
=150
6
20
o
C
100ms
100us
10ms
1ms
10s
1s
100
25
8
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.01
Duty factor=0.5
0.02
0.001
G
Single Pulse
5
0.05
0.2
0.1
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
Q
t , Pulse Width (s)
Q
13
0.1
G
GD
Charge
17
1
AP4511GH-A
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
21
10
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
+ T
Q
C
oss
rss
A
iss
1000
29
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