AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet - Page 2

• Manufacturer Part Number: AP4511GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
N-CH Electrical Characteristics@T
Source-Drain Diode
AP4511GM
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
G
D
GS
DS
=7A
=1A
=1.7A, V
=7A, V
o
=18Ω
=3.3Ω,V
C(unless otherwise specified)
=V
=10V, I
=35V, V
=28V, V
=28V
=18V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
GS
Test Conditions
Test Conditions
GS
, I
D
GS
D
=0V
=250uA
D
D
GS
D
=250uA
GS
GS
=7A
=7A
=5A
=0V
=10V
=0V
=0V
D
=1mA
Min.
Min.
35
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
830
150
110
1.2
18
29
11
12
22
18
12
9
3
6
7
6
-
-
-
-
-
-
±100
1330
Max. Units
Max. Units
1.8
1.2
25
37
25
18
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V