AP4511GM Advanced Power Electronics Corp., AP4511GM Datasheet - Page 6

• Manufacturer Part Number: AP4511GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GM

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 37
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4511GM
50
40
30
20
10
60
55
50
45
40
35
30
0
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
3
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
T
A
= 25
0.2
-V
Reverse Diode
o
T
1
-V
C
-V
j
SD
5
=150
GS
DS
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
0.4
, Drain-to-Source Voltage (V)
o
C
2
0.6
7
3
0.8
T
I
T
A
D
9
=25
j
= -4 A
V
=25
4
G
1
o
= - 3.0V
-7.0V
-5.0V
-4.5V
o
C
-10V
C
5
11
1.2
1.4
1.2
1.0
0.8
0.6
1.5
1.3
1.1
0.9
0.7
0.5
50
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
V
= 150
I
T
G
D
-V
v.s. Junction Temperature
Junction Temperature
1
=-10V
j
=-6A
T
, Junction Temperature (
DS
j
0
0
o
, Junction Temperature (
C
, Drain-to-Source Voltage (V)
2
50
50
3
o
100
C)
100
o
V
C)
4
G
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
150
5
150