AP4513GD Advanced Power Electronics Corp., AP4513GD Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4513GD

Manufacturer Part Number
AP4513GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4513GD

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
5.8
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
▼ RoHS Compliant
V
V
I
I
I
P
E
I
E
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
AR
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
AS
AR
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
D1
PDIP-8
Parameter
D1
1
D2
3
3
D2
S1
1
G1
4
S2
G2
3
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
N-CH BV
P-CH BV
Max.
±20
G1
35
5.8
4.7
20
12.5
0.05
Pb Free Plating Product
5
-55 to 150
-55 to 150
Rating
0.016
2
R
I
R
I
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
12.5
0.05
62.5
D1
S1
-4.3
-3.4
±20
-35
-20
-5
G2
AP4513GD
200615051-1/7
36mΩ
68mΩ
-4.3A
-35V
5.8A
Units
W/℃
℃/W
35V
Unit
W
mJ
mJ
V
V
A
A
A
A
D2
S2

Related parts for AP4513GD

AP4513GD Summary of contents

Page 1

... Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4513GD Pb Free Plating Product N-CH BV 35V DSS R 36mΩ DS(ON) I 5.8A D P-CH BV -35V DSS R 68mΩ DS(ON) I -4. ...

Page 2

... AP4513GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =- =-28V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-4A dI/dt=-100A/µs =25Ω G AP4513GD Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

Page 4

... AP4513GD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 105 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4513GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

Page 6

... AP4513GD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 135 115 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4513GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

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