The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4513GD

Manufacturer Part NumberAP4513GD
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4513GD datasheet
 


Specifications of AP4513GD

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v36Rds(on) / Max(m?) Vgs@4.5v60
Qg (nc)6Qgs (nc)2
Qgd (nc)3Id(a)5.8
Pd(w)2ConfigurationComplementary N-P
PackagePDIP-8  
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Advanced Power
Electronics Corp.
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
▼ RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
PDIP-8
G1
S1
N-channel
3
3
1
4
1
Parameter
3
AP4513GD
Pb Free Plating Product
N-CH BV
35V
DSS
R
36mΩ
DS(ON)
I
5.8A
D
P-CH BV
-35V
DSS
R
68mΩ
DS(ON)
I
-4.3A
D
D1
G2
G1
S1
Rating
Units
P-channel
35
-35
±20
±20
5.8
-4.3
4.7
-3.4
20
-20
2
0.016
W/℃
12.5
12.5
5
-5
0.05
0.05
-55 to 150
-55 to 150
Value
Unit
℃/W
Max.
62.5
200615051-1/7
D2
S2
V
V
A
A
A
W
mJ
A
mJ

AP4513GD Summary of contents

  • Page 1

    ... Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4513GD Pb Free Plating Product N-CH BV 35V DSS R 36mΩ DS(ON) I 5.8A D P-CH BV -35V DSS R 68mΩ DS(ON) I -4. ...

  • Page 2

    ... AP4513GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... I =- =-28V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.7A =-4A dI/dt=-100A/µs =25Ω G AP4513GD Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

  • Page 4

    ... AP4513GD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 105 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 0.0001 10 100 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4513GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

  • Page 6

    ... AP4513GD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 135 115 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4513GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...