AP4513GD Advanced Power Electronics Corp., AP4513GD Datasheet - Page 4

• Manufacturer Part Number: AP4513GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GD

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4513GD
105
30
20
10
85
65
45
25
0
5
4
3
2
1
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
V
1
SD
T
DS
GS
j
4
=150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
0.4
A
o
=25
C
2
o
C
0.6
6
3
0.8
T
I
A
D
8
=25
T
=3A
j
4
=25
V
1
o
G
C
=3.0V
o
7.0V
5.0V
4.5V
C
10V
1.2
10
5
30
20
10
1.5
1.1
0.7
0.3
1.8
1.4
1.0
0.6
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
A
= 150
I
V
D
G
=5A
v.s. Junction Temperature
Junction Temperature
V
=10V
1
T
o
DS
j
C
0
0
,Junction Temperature (
T
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
2
50
50
3
100
100
o
C)
4
V
o
C)
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
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