AP4513GH-A Advanced Power Electronics Corp., AP4513GH-A Datasheet - Page 3

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4513GH-A

Manufacturer Part Number
AP4513GH-A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4513GH-A

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
54
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
7.7
Pd(w)
3.125
Configuration
Complementary N-P
Package
TO-252-4L
ΔBV
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
P-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
j
j
=25
=150
o
C)
o
C)
2
j
=25
V
Reference to 25℃,I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-5A, V
=-5A, V
=-5A
=-1A
o
=15Ω
=3.3Ω,V
=V
=-10V, I
=-35V, V
=-28V, V
=-28V
=-15V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
, I
GS
GS
D
D
=-250uA
=0V
=0V
=-250uA
D
D
GS
D
GS
GS
=-5A
=-5A
=-3A
=-10V
=0V
=0V
D
=-1mA
Min.
Min.
-0.8
-35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AP4513GH-A
-0.03
Typ.
Typ.
400
1.2
7.2
16
90
60
21
14
7
6
3
7
7
3
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
-2.5
-1.2
105
640
-25
68
10
11
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
ns
V
V
S
V
3/7

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