AP4513GM-HF Advanced Power Electronics Corp., AP4513GM-HF Datasheet - Page 5

• Manufacturer Part Number: AP4513GM-HF
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4513GM-HF

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 36
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 6
• Qgs (nc): 2
• Qgd (nc): 3
• Id(a): 5.8
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
9
6
3
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
DS
GS
Single Pulse
T
V
A
DS
=25
Q
, Drain-to-Source Voltage (V)
4
t
o
d(on)
V
G
C
I
DS
, Total Gate Charge (nC)
D
1
= 5 A
= 28 V
t
r
8
10
t
d(off)
12
t
f
100ms
10ms
1ms
10s
DC
1s
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
1000
100
0.01
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.001
Duty factor=0.5
G
5
0.01
0.05
0.1
0.02
0.2
Q
V
Single Pulse
DS
GS
0.01
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
13
0.1
G
GD
Charge
AP4513GM-HF
17
1
P
DM
21
Duty factor = t/T
Peak T
R
10
thja
=135
j
t
= P
f=1.0MHz
o
C/W
DM
T
100
25
x R
C
C
C
thja
iss
Q
rss
oss
+ T
a
1000
29
5