AP4513GM-HF Advanced Power Electronics Corp., AP4513GM-HF Datasheet - Page 7

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4513GM-HF

Manufacturer Part Number
AP4513GM-HF
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4513GM-HF

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
36
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
6
Qgs (nc)
2
Qgd (nc)
3
Id(a)
5.8
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4513GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
P-Channel
0.01
100
0.1
12
10
10
1
8
6
4
2
0
0.1
0.0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
V
V
Single Pulse
GS
DS
T
V
A
-V
I
DS
=25
D
DS
=-4A
=-28V
Q
3.0
o
t
, Drain-to-Source Voltage (V)
G
d(on)
C
, Total Gate Charge (nC)
1
t
r
6.0
10
t
d(off)
9.0
t
f
100ms
10ms
1ms
10s
DC
1s
12.0
100
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
G
0.001
0.02
0.01
5
Duty factor=0.5
0.05
0.1
0.2
Single Pulse
-V
Q
GS
DS
t , Pulse Width (s)
0.01
9
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
G
GD
Charge
AP4513GM-HF
1
17
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
Q
C
C
C
a
iss
rss
oss
1000
29
7

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