The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4515GM

Manufacturer Part NumberAP4515GM
DescriptionThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4515GM datasheet
 

Specifications of AP4515GM

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v22Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)11Qgs (nc)3.5
Qgd (nc)6Id(a)7.7
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 1/7

Download datasheet (86Kb)Embed
Next
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D2
D2
D1
D1
D1
D1
G2
G2
S2
S2
G1
SO-8
G1
S1
SO-8
S1
N-channel
3
3
1
Parameter
3
AP4515GM
Pb Free Plating Product
N-CH BV
35V
DSS
R
22mΩ
DS(ON)
I
7.7A
D
P-CH BV
-35V
DSS
R
40mΩ
DS(ON)
I
-5.7A
D
D1
G2
G1
S1
Rating
Units
P-channel
35
-35
±20
±12
7.7
-5.7
6.2
-4.6
30
-30
2.0
W
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
Max.
62.5
200408051-1/7
D2
S2
V
V
A
A
A

AP4515GM Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO SO-8 S1 N-channel Parameter 3 AP4515GM Pb Free Plating Product N-CH BV 35V DSS R 22mΩ DS(ON) I 7.7A D P-CH BV -35V DSS R 40mΩ DS(ON) I -5. Rating Units P-channel ...

  • Page 2

    ... AP4515GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... I =- =-25V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-5A dI/dt=-100A/µs AP4515GM Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

  • Page 4

    ... AP4515GM N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of Reverse Diode ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 Fig 12. Gate Charge Waveform AP4515GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 0.01 Duty factor = t/T Peak ...

  • Page 6

    ... AP4515GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms 0. 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4515GM f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0.02 0. Single Pulse T Duty factor = t/T Peak T ...