AP4515GM Advanced Power Electronics Corp., AP4515GM Datasheet - Page 7

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4515GM

Manufacturer Part Number
AP4515GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4515GM

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
22
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
11
Qgs (nc)
3.5
Qgd (nc)
6
Id(a)
7.7
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4515GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP4515GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
P-Channel
0.01
100
0.1
40
30
20
10
12
10
10
0
8
6
4
2
0
1
0.1
0
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
V
Single Pulse
DS
V
T
-V
I
DS
A
=-5V
D
=25
DS
=-5A
=-25V
Q
-V
5
G
2
, Drain-to-Source Voltage (V)
o
GS
, Total Gate Charge (nC)
C
, Gate-to-Source Voltage (V)
1
T
j
=25
o
10
4
C
10
T
15
j
6
=150
o
100ms
100us
C
10ms
1ms
DC
1s
20
100
8
Fig 10. Effective Transient Thermal Impedance
1000
0.001
0.01
100
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
0.02
Duty factor=0.5
0.05
0.01
G
0.2
0.1
Single Pulse
5
0.001
Q
-V
GS
DS
9
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
G
GD
Charge
0.1
17
P
1
AP4515GM
DM
Duty factor = t/T
Peak T
R
thja
21
= 135℃/W
j
= P
t
DM
T
f=1.0MHz
x R
10
25
thja
+ T
C
Q
C
a
C
rss
oss
iss
100
29
7/7

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