AP4519GED Advanced Power Electronics Corp., AP4519GED Datasheet

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... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4519GED Pb Free Plating Product N-CH BV 35V DSS R 32mΩ DS(ON) I 6.2A D P-CH BV -35V DSS R 64mΩ DS(ON) I -5. ...

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... AP4519GED N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... =- =-25V DS V =-4. =-15V =3.3Ω, =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-1.5A =-5A dI/dt=-100A/µs AP4519GED Min. Typ. Max. Units -35 - =-1mA - -0. =-250uA - ...

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... AP4519GED N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

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... DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4519GED f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0.1 0. 0.02 0.01 Duty factor = t/T Peak Single Pulse ...

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... AP4519GED P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 150 130 110 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

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... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance o T =150 C j -4. Fig 12. Gate Charge Waveform AP4519GED f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...