AP4519GED Advanced Power Electronics Corp., AP4519GED Datasheet - Page 4

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4519GED

Manufacturer Part Number
AP4519GED
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4519GED

Vds
35V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
32
Rds(on) / Max(m?) Vgs@4.5v
48
Qg (nc)
10
Qgs (nc)
3
Qgd (nc)
5
Id(a)
6.2
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
N-Channel
AP4519GED
30
25
20
15
10
80
60
40
20
5
0
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
V
DS
V
SD
1
GS
4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
T
, Gate-to-Source Voltage (V)
j
0.4
=150
o
C
0.6
2
6
T
A
= 25
T
0.8
o
I
A
C
D
=25
=4A
T
3
8
j
o
=25
C
V
1
G
o
=3.0V
C
7.0V
5.0V
4.5V
10V
1.2
4
10
1.8
1.5
1.2
0.9
0.6
1.5
1.3
1.1
0.9
0.7
0.5
30
25
20
15
10
5
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
=10V
=6A
V
v.s. Junction Temperature
Junction Temperature
1
DS
T
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
50
50
T
3
A
= 150
100
100
o
C
o
o
C)
4
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
5
4/7

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