AP4519GED Advanced Power Electronics Corp., AP4519GED Datasheet - Page 5

• Manufacturer Part Number: AP4519GED
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4519GED

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 48
• Qg (nc): 10
• Qgs (nc): 3
• Qgd (nc): 5
• Id(a): 6.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
10
1
16
12
20
15
10
0.1
5
0
8
4
0
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
DS
Single Pulse
T
=5V
A
=25
V
5
V
V
I
Q
DS
D
DS
GS
G
o
=6A
=25V
C
T
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
, Gate-to-Source Voltage (V)
1
2
j
=25
10
o
C
15
T
10
4
j
=150
20
o
C
100ms
100us
10ms
1ms
DC
1s
25
100
6
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
V
0.02
0.01
0.05
0.2
0.1
G
Duty factor=0.5
0.001
5
V
Single Pulse
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
G
13
GD
Charge
0.1
17
AP4519GED
P
1
DM
Duty factor = t/T
Peak T
R
thja
=90
21
j
= P
t
o
C/W
DM
f=1.0MHz
T
10
x R
thja
25
+ T
Q
C
C
C
a
rss
oss
iss
100
5/7