AP4519GED Advanced Power Electronics Corp., AP4519GED Datasheet - Page 7

• Manufacturer Part Number: AP4519GED
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4519GED

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 32
• Rds(on) / Max(m?) Vgs@4.5v: 48
• Qg (nc): 10
• Qgs (nc): 3
• Qgd (nc): 5
• Id(a): 6.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
0.01
100
0.1
10
1
16
12
30
20
10
0.1
8
4
0
0
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
-V
DS
Single Pulse
V
T
DS
=-5V
I
-V
DS
D
A
Q
=-5A
, Drain-to-Source Voltage (V)
=-25V
GS
=25
5
G
, Gate-to-Source Voltage (V)
, Total Gate Charge (nC)
1
o
2
C
T
j
=25
10
o
C
10
4
15
T
j
=150
100ms
100us
10ms
1ms
DC
1s
o
C
20
100
6
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
Duty factor=0.5
0.2
0.05
0.02
V
0.01
0.1
G
5
0.001
Single Pulse
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
0.01
t , Pulse Width (s)
Q
Q
13
G
GD
Charge
0.1
17
AP4519GED
P
1
DM
Duty factor = t/T
Peak T
R
thja
21
=90
j
= P
o
t
C/W
f=1.0MHz
DM
T
x R
10
25
thja
+ T
C
C
Q
C
a
iss
oss
rss
100
29
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