AP95T06AGP Advanced Power Electronics Corp., AP95T06AGP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP95T06AGP

Manufacturer Part Number
AP95T06AGP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95T06AGP

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8.5
Rds(on) / Max(m?) Vgs@4.5v
12
Qg (nc)
40
Qgs (nc)
11
Qgd (nc)
27
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
4
D
S
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
+20
260
138
450
60
75
66
30
DS(ON)
S
DSS
Value
AP95T06AGP
0.9
62
TO-220(P)
8.5mΩ
200812023
Units
W/℃
Units
℃/W
℃/W
60V
75A
mJ
W
V
V
A
A
A
A
1

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AP95T06AGP Summary of contents

Page 1

... Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V Parameter AP95T06AGP RoHS-compliant Product BV 60V DSS R 8.5mΩ DS(ON) I 75A D G TO-220( Rating Units 60 +20 ...

Page 2

... AP95T06AGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance 2.0 1 1.0 0.5 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP95T06AGP 10V o C 7.0 V 5. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 150 Junction Temperature ( ...

Page 4

... AP95T06AGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ Part Marking Information & Packing : TO-220 95T06AGP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence If last "S" is numerical letter : Rohs product If last " ...

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