AP95T06BGP Advanced Power Electronics Corp., AP95T06BGP Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP95T06BGP

Manufacturer Part Number
AP95T06BGP
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95T06BGP

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
9
Qg (nc)
56
Qgs (nc)
16
Qgd (nc)
24
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-220
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
G
@ 10V
@ 10V
4
3
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
D
1.11
±20
260
138
450
S
60
75
57
30
DS(ON)
DSS
Value
AP95T06BGP
0.9
62
TO-220(P)
200804281
9mΩ
Units
W/℃
Units
℃/W
℃/W
60V
75A
mJ
W
V
V
A
A
A
A
1

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AP95T06BGP Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 3 @ 10V GS @ 10V Parameter AP95T06BGP RoHS-compliant Product BV 60V DSS R 9mΩ DS(ON) I 75A D G TO-220( Rating Units 60 ±20 ...

Page 2

... AP95T06BGP Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =45A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 1.3 1 0.9 0.7 0.5 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95T06BGP 8 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ...

Page 4

... AP95T06BGP Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E E1 φ Part Marking Information & Packing : TO-220 95T06BGP LOGO YWWSSS Part Number Package Code Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 4.40 4.60 b 0.76 0. 8.60 8.80 c 0.36 0.43 E 9.80 10.10 L4 14.70 15.00 L5 6.20 6.40 D1 5.10 REF. c1 1.25 1.35 b1 1.17 1.32 L 13.25 13.75 e 2.54 REF. ...

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