AP95T06GS-HF Advanced Power Electronics Corp., AP95T06GS-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP95T06GS-HF

Manufacturer Part Number
AP95T06GS-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP95T06GS-HF

Vds
60V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
8.5
Rds(on) / Max(m?) Vgs@4.5v
12
Qg (nc)
72
Qgs (nc)
16
Qgd (nc)
53
Id(a)
75
Pd(w)
138
Configuration
Single N
Package
TO-263
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
E
I
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP95T06GP) are
available for low-profile applications.
D
D
DM
AR
STG
J
DS
GS
D
AS
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
GS
GS
@ 10V
@ 10V
4
G
3
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
G
5
-55 to 150
-55 to 150
AP95T06GS/P-HF
D
Rating
BV
R
I
D
1.11
+20
260
138
450
S
60
75
66
30
DS(ON)
G D
DSS
Value
0.9
40
62
S
TO-263(S)
TO-220(P)
8.5mΩ
201108053
Units
W/℃
Units
℃/W
60V
75A
℃/W
℃/W
mJ
W
V
V
A
A
A
A
1

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AP95T06GS-HF Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter 3 @ 10V GS @ 10V Parameter AP95T06GS/P-HF Halogen-Free Product BV 60V D DSS R 8.5mΩ DS(ON) I 75A TO-263(S) G TO-220(P) ...

Page 2

... AP95T06GS/P-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V Fig 2. Typical Output Characteristics 1.6 I =45A D V =10V G 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.5 1 0.5 0.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP95T06GS/P-HF 10V o 7 150 C C 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP95T06GS/P- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 130 ...

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