AP6677GH Advanced Power Electronics Corp., AP6677GH Datasheet - Page 2

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6677GH

Manufacturer Part Number
AP6677GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP6677GH

Vds
-40V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12.3
Rds(on) / Max(m?) Vgs@4.5v
18
Qg (nc)
44
Qgs (nc)
6
Qgd (nc)
28
Id(a)
-60
Pd(w)
69
Configuration
Single P
Package
TO-252

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP6677GH
Manufacturer:
APEC
Quantity:
1 802
Part Number:
AP6677GH
Manufacturer:
ACON
Quantity:
5 785
Company:
Part Number:
AP6677GH
Quantity:
45 000
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP6677GH
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board
Parameter
Parameter
2
2
2
2
j
=25
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=-100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-30A
=-30A
G
D
=-30A, V
=-10A, V
=0.67Ω
=3.3Ω,V
=V
=-10V, I
=-32V, V
=-32V
=-20V
=-25V
=0V, I
=-10V, I
=-4.5V, I
= +20V, V
=-4.5V
=0V
GS
Test Conditions
Test Conditions
, I
D
D
GS
GS
=-250uA
=-250uA
D
GS
D
D
GS
=-30A
=-30A
=0V
=0V,
=-20A
DS
=-10V
=0V
=0V
Min.
Min.
-40
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3160 5050
Typ.
Typ.
120
560
380
46
44
28
11
60
60
42
46
6
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
12.3
-1.2
-25
18
70
-3
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2

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