AP6677GH Advanced Power Electronics Corp., AP6677GH Datasheet - Page 3

• Manufacturer Part Number: AP6677GH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6677GH

• Vds: -40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12.3
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Qg (nc): 44
• Qgs (nc): 6
• Qgd (nc): 28
• Id(a): -60
• Pd(w): 69
• Configuration: Single P
• Package: TO-252

200
160
120
80
40
16
14
12
10
40
30
20
10
0
8
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
-V
0.2
-V
SD
-V
Reverse Diode
o
2
C
GS
DS
, Source-to-Drain Voltage (V)
4
T
0.4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
j
=150
4
o
0.6
C
6
0.8
I
T
6
D
C
= -20 A
=25
T
j
=25
1
℃
8
V
G
o
8
C
= - 4.0 V
1.2
-7.0 V
-5.0 V
-6.0 V
-10V
1.4
10
10
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
1.6
1.4
1.2
0.8
0.6
0.4
0
1
-50
0
-50
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
I
D
G
=-30A
=-10V
-V
Junction Temperature
v.s. Junction Temperature
2
T
DS
T
j
j
0
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
4
T
C
= 1 5 0
50
50
6
o
C
AP6677GH
100
100
o
o
V
C)
C)
8
G
= - 4.0 V
-7.0V
-6.0V
-5.0V
-10V
150
10
150
3