AP6679GS-A Advanced Power Electronics Corp., AP6679GS-A Datasheet

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... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP6679GS/P-A RoHS-compliant Product BV -40V DSS R 13.5mΩ DS(ON) I -65A TO-263( TO-220( Rating ...

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... AP6679GS/P-A Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... I = -28A -20A -10V G ℃ T =25 1.6 C 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance 1.5 1.3 1.1 o =25 C 0.9 0.7 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP6679GS/P-A -10V o T =150 C -7.0V C -5.0V -4. -3.0V G 2.0 4.0 6.0 8.0 , Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 10 ...

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... AP6679GS/P -16A -32V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area - = ...